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THE ALGORITHMIC BASIS OF MODELLING OF FAILURES FROM EXPOSURE TO HEAVY CHARGED PARTICLES IN VLSI, MADE BY DEEP-SUBMICRON TECHNOLOGIES
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THE ALGORITHMIC BASIS OF MODELLING OF FAILURES FROM EXPOSURE TO HEAVY CHARGED PARTICLES IN VLSI, MADE BY DEEP-SUBMICRON TECHNOLOGIES
Groshev A.
Kryukov V. 2
Sklyar V. 3
Zolnikov Konstantin Vladimirovich 4
Chubur K. 5
Authors:
2.  AO «Nauchno-issledovatel'skiy institut elektronnoy tehniki»

3.  AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki"

4.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki"

Russian Federation
5.  FSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
Type:
Article
DOI:
https://doi.org/10.12737/17165
Pages:
from 33 to 35
Status:
Published
Received:
11.01.2016
Accepted:
11.01.2016
Published:
11.01.2016
Language:
Russian
Keywords:
computer-aided design, radiation, chip.
Abstract and keywords
Abstract (English):
The paper discusses the changes in the circuit parameters under the influence of low-intensive radiation of space factors. Lighted modeling of process of accumulation of defects for low-intensity radiation.

Keywords:
computer-aided design, radiation, chip.
Text

Рассматривается моделирование накопления заряда в полупроводниковых структурах КМОП транзистора при воздействии излучения малой мощности; предложены соотношения для изменения порогового напряжения и подвижности в зависимости от мощности дозы, времени и температуры; рассматриваются методы получения всех коэффициентов в данных соотношениях для различных технологий, топологических норм и схемотехнических решений [1-4]. 

References

1. Sklyar, V. A. Proektirovanie i ispytaniya mikroskhem dlya sistem sbora i obrabotki informatsii [Tekst] / V. A. Sklyar, A. V. Achkasov, K. V. Zol´nikov. Radiotekhnika. - 2014. - № 6. - S. 94-98.

2. Zol´nikov, K. V. Metod i algoritm poiska defektov dlya radiatsionno-stoykikh mikroskhem [Tekst] / K. V. Zol´nikov, V. A. Sklyar, V. P. Kryukov, A. V. Achkasov, V. I. Antsiferova, S. A. Evdokimova. Voprosy atomnoy nauki i tekhniki. Seriya: Fizika radiatsionnogo vozdeystviya na radioelektronnuyu apparaturu. - 2014. - № 2. - S. 10-13.

3. Sklyar, V. A. Obzor programm dlya SAPR submikronnykh SBIS [Tekst] / V. A. Sklyar, K. V. Zol´nikov, V. V. Lavlinskiy, S. A. Evdokimova, V. I. Antsiferova. Modelirovanie sistem i protsessov. - 2013. - № 2. - S. 72-76.

4. Achkasov, V. N. Algoritm modelirovaniya rabotosposobnosti mikroskhem v usloviyakh vozdeystviya vneshnikh faktorov v podsisteme SAPR IET [Tekst] / V. N. Achkasov, K. V. Zol´nikov. Modelirovanie sistem i protsessov. - 2013. - № 4. - S. 16-19.

5. Tapero, K. I. Kinetika nakopleniya i otzhiga radiatsionnykh defektov v aktivnykh oblastyakh kremnievykh MOP i KMOP struktur. [Tekst] : dis. … kand. f.-m. nauk / K. I. Tapero. - Moskva, 1997.

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