Computer simulation of the operation of transistors and semiconductor devices based on it

Aleksandr V. Poluektov; F. Makarenko; Roman Y. Medvedev

doi:10.12737/2219-0767-2023-16-1-77-84

UDC 004.94 UDC 621.3

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COMPUTER SIMULATION OF THE OPERATION OF TRANSISTORS AND SEMICONDUCTOR DEVICES BASED ON IT Computer simulation of the operation of transistors and semiconductor devices based on it

АА Аа

Published in Modeling of systems and processes · Volume 16, Issue 1 · Pages 77–84 · Rubric: Fiziko-matematicheskie nauki

DOI: https://doi.org/10.12737/2219-0767-2023-16-1-77-84

Received: 25.03.2023 Accepted: 29.03.2023 Published: 29.03.2023

Authors

Aleksandr V. Poluektov

F. Makarenko

Roman Y. Medvedev

Aleksandr V. Poluektov

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

F. Makarenko

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

Roman Y. Medvedev

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

ABSTRACT

The technology of modeling a field-effect transistor in the CAD system COMSOL Multiphysics is considered. The possibilities of CAD, its methods of graphical construction of the model and methods of modeling the behavior of the model are being studied. The object of study is the MOS transistor, its scope, operation and a mathematical model that can be used in designing its operation. The Shikhman-Hodges model, input and output parameters are determined, the degree of its adequacy to a real transistor is set, the main parameters are determined, with the help of which it is possible to conduct a study of a field-effect transistor, its current-voltage characteristic. A transistor model is built in the mode of operation in the mode of small-signal amplifiers, replacing it with a linear four-port model, it is described when this model can be applied when simulating the operation of the device.

KEYWORDS

Model, mathematical model, computer model, CAD, COMSOL Multiphysics, MOSFET, Shichman-Hodges model, current-voltage characteristic, small-signal amplifier mode.

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JATS XML

Editor-in-Chief, editorial board chair

GOST

Poluektov A. V., Makarenko F. V., Medvedev R. Y. Computer simulation of the operation of transistors and semiconductor devices based on it // Modeling of systems and processes. 2023. no. 1. pp. 77-84. DOI: https://doi.org/10.12737/2219-0767-2023-16-1-77-84. (Date of access 20.09.2026).

MLA

Aleksandr V. Poluektov, Makarenko F. V., Medvedev R. Y.. "Computer simulation of the operation of transistors and semiconductor devices based on it." Modeling of systems and processes 16.1 (2023): 77-84. DOI: https://doi.org/10.12737/2219-0767-2023-16-1-77-84.

APA

Poluektov A. V., Makarenko F. V., Medvedev R. Y. (2023). Computer simulation of the operation of transistors and semiconductor devices based on it. Modeling of systems and processes, 16(1), 77-84. https://doi.org/10.12737/2219-0767-2023-16-1-77-84

Chicago

Aleksandr V. Poluektov, Makarenko F. V., Medvedev R. Y.. "Computer simulation of the operation of transistors and semiconductor devices based on it." Modeling of systems and processes 16, no. 1 (2023): 77-84. https://doi.org/10.12737/2219-0767-2023-16-1-77-84.

WIKI

{{cite journal | author = Poluektov A. V., Makarenko F. V., Medvedev R. Y. | title = Computer simulation of the operation of transistors and semiconductor devices based on it | journal = Modeling of systems and processes | year = 2023 | volume = 16 | issue = 1 | pages = 77-84 | doi = 10.12737/2219-0767-2023-16-1-77-84 }}

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COMPUTER SIMULATION OF THE OPERATION OF TRANSISTORS AND SEMICONDUCTOR DEVICES BASED ON IT Computer simulation of the operation of transistors and semiconductor devices based on it

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