Computer simulation of radiation effects on high-speed non-volatile memory

Pavel A. Chubunov; Artem P. Lapshin; Maksim V. Solodilov; Roman B. Ryazancev; N. Gamzatov; Svetlana A. Evdokimova

doi:10.12737/2219-0767-2022-15-3-93-102

UDC 004.9 UDC 621.3

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COMPUTER SIMULATION OF RADIATION EFFECTS ON HIGH-SPEED NON-VOLATILE MEMORY Computer simulation of radiation effects on high-speed non-volatile memory

АА Аа

Published in Modeling of systems and processes · Volume 15, Issue 3 · Pages 93–102 · Rubric: Tehnicheskie nauki

DOI: https://doi.org/10.12737/2219-0767-2022-15-3-93-102

Received: 05.10.2022 Accepted: 05.10.2022 Published: 05.10.2022

Authors

Pavel A. Chubunov

Artem P. Lapshin

Maksim V. Solodilov

Roman B. Ryazancev

et al.

N. Gamzatov

Svetlana A. Evdokimova

Pavel A. Chubunov

AO "Nauchno-issledovatel'skiy institut kosmicheskogo priborostroeniya" Russian Federation

Artem P. Lapshin

AO "Nauchno-issledovatel'skiy institut priborov" Russian Federation

Maksim V. Solodilov

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

Roman B. Ryazancev

AO "VZPP-S" Russian Federation

N. Gamzatov

Scientific research institute «Submicron» Russian Federation · Moscow

Svetlana A. Evdokimova

Academic degree: candidate of technical sciences

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

ABSTRACT

The article is devoted to the study of radiation effects on non-volatile memory. The basis of non-volatile memory with high speed is the ferroelectric effect. The paper describes the principle of operation of FRAM memory, considers the characteristics of various options for the implementation of FRAM. Particular attention is paid to the description of experimental studies of the resistance of FRAM to the effects of ionization radiation from outer space. PZT-FRAMs from three manufacturers, Krysalis Corporation, National Semiconductor Corporation, and Sandia National Laboratories, were considered. The paper illustrates the dependences of the switching charge under the influence of X-rays, the charge change during irradiation and annealing at low temperatures, plots of Hysteresis loops, etc. The influence of neutrons on PZT FRAM was studied by measuring the total switching charge observed when measuring the Hysteresis loop; residual charge; effect on repeated read/write cycles. The experiment involved three samples with different PZT films 240, 250, and 400 nm thick.

KEYWORDS

Radiation exposure, non-volatile memory, ferroelectric effect, resistance, CMOS technology, Hysteresis loop.

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JATS XML

Editor-in-Chief, editorial board chair

GOST

Chubunov P. A., Lapshin A. P., Solodilov M. V., Ryazancev R. B., Gamzatov N. G., Evdokimova S. A. Computer simulation of radiation effects on high-speed non-volatile memory // Modeling of systems and processes. 2022. no. 3. pp. 93-102. DOI: https://doi.org/10.12737/2219-0767-2022-15-3-93-102. (Date of access 19.09.2026).

MLA

Pavel A. Chubunov, Lapshin A. P., Solodilov M. V., Ryazancev R. B., Gamzatov N. G., Evdokimova S. A.. "Computer simulation of radiation effects on high-speed non-volatile memory." Modeling of systems and processes 15.3 (2022): 93-102. DOI: https://doi.org/10.12737/2219-0767-2022-15-3-93-102.

APA

Chubunov P. A., Lapshin A. P., Solodilov M. V., Ryazancev R. B., Gamzatov N. G., Evdokimova S. A. (2022). Computer simulation of radiation effects on high-speed non-volatile memory. Modeling of systems and processes, 15(3), 93-102. https://doi.org/10.12737/2219-0767-2022-15-3-93-102

Chicago

Pavel A. Chubunov, Lapshin A. P., Solodilov M. V., Ryazancev R. B., Gamzatov N. G., Evdokimova S. A.. "Computer simulation of radiation effects on high-speed non-volatile memory." Modeling of systems and processes 15, no. 3 (2022): 93-102. https://doi.org/10.12737/2219-0767-2022-15-3-93-102.

WIKI

{{cite journal | author = Chubunov P. A., Lapshin A. P., Solodilov M. V., Ryazancev R. B., Gamzatov N. G., Evdokimova S. A. | title = Computer simulation of radiation effects on high-speed non-volatile memory | journal = Modeling of systems and processes | year = 2022 | volume = 15 | issue = 3 | pages = 93-102 | doi = 10.12737/2219-0767-2022-15-3-93-102 }}

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COMPUTER SIMULATION OF RADIATION EFFECTS ON HIGH-SPEED NON-VOLATILE MEMORY Computer simulation of radiation effects on high-speed non-volatile memory

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