Experimental studies of radiation effects on FRAM chips

V. Zolnikov; N. Gamzatov; V. Antsiferova; Aleksandr V. Poluektov; Vladimir A. Fironov

doi:10.12737/2219-0767-2022-15-3-16-24

UDC 004 UDC 621.3

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EXPERIMENTAL STUDIES OF RADIATION EFFECTS ON FRAM CHIPS Experimental studies of radiation effects on FRAM chips

АА Аа

Published in Modeling of systems and processes · Volume 15, Issue 3 · Pages 16–24 · Rubric: Tehnicheskie nauki

DOI: https://doi.org/10.12737/2219-0767-2022-15-3-16-24

Received: 03.10.2022 Accepted: 05.10.2022 Published: 05.10.2022

Authors

V. Zolnikov

N. Gamzatov

V. Antsiferova

Aleksandr V. Poluektov

et al.

Vladimir A. Fironov

V. Zolnikov

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

N. Gamzatov

Scientific research institute «Submicron» Russian Federation · Moscow

V. Antsiferova

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

Aleksandr V. Poluektov

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

Vladimir A. Fironov

Voronezh State University of Forestry and Technologies named after G.F. Morozov Voronezh

ABSTRACT

The work is devoted to the study of radiation effects on FRAM memory chips. The effects of heavy charged particles entering the microcircuits are considered, the results in static and dynamic modes are analyzed. In statistical mode, the sensitivity of FRAM did not show any dependencies on the data pattern, but showed a relationship with fluence. In dynamic mode, the order of access to memory cells does not affect the sensitivity of memory. The dependences of the consumption current on the radiation dose and the annealing time after irradiation are given. An effects map is shown showing a two-band area sensitive to the laser. According to its relative area, this is the peripheral logic of the device. Studies have confirmed the usefulness of only a few effect maps. This is consistent with the results of tests for exposure to heavy charged particles.

KEYWORDS

Radiation exposure, FRAM chips, electronic component base, heavy charged particles, ionization radiation

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JATS XML

Editor-in-Chief, editorial board chair

GOST

Zolnikov V. K., Gamzatov N. G., Antsiferova V. I., Poluektov A. V., Fironov V. A. Experimental studies of radiation effects on FRAM chips // Modeling of systems and processes. 2022. no. 3. pp. 16-24. DOI: https://doi.org/10.12737/2219-0767-2022-15-3-16-24. (Date of access 27.10.2026).

MLA

V. Zolnikov, Gamzatov N. G., Antsiferova V. I., Poluektov A. V., Fironov V. A.. "Experimental studies of radiation effects on FRAM chips." Modeling of systems and processes 15.3 (2022): 16-24. DOI: https://doi.org/10.12737/2219-0767-2022-15-3-16-24.

APA

Zolnikov V. K., Gamzatov N. G., Antsiferova V. I., Poluektov A. V., Fironov V. A. (2022). Experimental studies of radiation effects on FRAM chips. Modeling of systems and processes, 15(3), 16-24. https://doi.org/10.12737/2219-0767-2022-15-3-16-24

Chicago

V. Zolnikov, Gamzatov N. G., Antsiferova V. I., Poluektov A. V., Fironov V. A.. "Experimental studies of radiation effects on FRAM chips." Modeling of systems and processes 15, no. 3 (2022): 16-24. https://doi.org/10.12737/2219-0767-2022-15-3-16-24.

WIKI

{{cite journal | author = Zolnikov V. K., Gamzatov N. G., Antsiferova V. I., Poluektov A. V., Fironov V. A. | title = Experimental studies of radiation effects on FRAM chips | journal = Modeling of systems and processes | year = 2022 | volume = 15 | issue = 3 | pages = 16-24 | doi = 10.12737/2219-0767-2022-15-3-16-24 }}

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EXPERIMENTAL STUDIES OF RADIATION EFFECTS ON FRAM CHIPS Experimental studies of radiation effects on FRAM chips

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