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Development of materials and radiation-resistant ECB based on KNS / KNI structures
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DEVELOPMENT OF MATERIALS AND RADIATION-RESISTANT ECB BASED ON KNS / KNI STRUCTURES
UDK 60 Прикладные науки. Общие вопросы
Strukov I. 1
Grechanyy Sergey Vladimirovich 2
Yagodkin A. Sergeevich 3
Chernikov Aleksey Nikolaevich 4
Authors:
1.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Voronezh, Russian Federation
2.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

3.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
4.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Type:
Article
DOI:
https://doi.org/10.12737/2219-0767-2020-13-2-72-76
Pages:
from 72 to 76
Status:
Published
Received:
21.09.2020
Accepted:
21.09.2020
Published:
21.09.2020
Subject area:
UDK 60 Прикладные науки. Общие вопросы
Language:
Russian
Keywords:
Electronic component base (ECB), radiation resistance, KNS/KNI structures, ultrafine silicon layer on a sapphire substrate (UTSi), microelectronics, LIC
Abstract and keywords
Abstract (English):
The article deals with the problems of development and selection of materials based on the structures of KNS/CNI (silicon on insulator/ silicon on sapphire). The article describes the prospects of technology for designing and manufacturing chips based on ultra-thin silicon layers on a sapphire substrate (UTSi). The result of a comparative analysis of modern technologies for manufacturing KNI structures is presented.

Keywords:
Electronic component base (ECB), radiation resistance, KNS/KNI structures, ultrafine silicon layer on a sapphire substrate (UTSi), microelectronics, LIC
References

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6. Bogdanov, D.S. Radiacionnaya stoykost' radioelektronnogo ustroystva v usloviyah kosmicheskogo prostranstva / D.S. Bogdanov, I.A. Bogdanova, A.N. Volnykin // Vestnik Ryazanskogo gosudarstvennogo radiotehnicheskogo universiteta. - 2019. - № 70. - S. 107-117.

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