DEVELOPMENT OF MATERIALS AND RADIATION-RESISTANT ECB BASED ON KNS / KNI STRUCTURES
Abstract and keywords
Abstract (English):
The article deals with the problems of development and selection of materials based on the structures of KNS/CNI (silicon on insulator/ silicon on sapphire). The article describes the prospects of technology for designing and manufacturing chips based on ultra-thin silicon layers on a sapphire substrate (UTSi). The result of a comparative analysis of modern technologies for manufacturing KNI structures is presented.

Keywords:
Electronic component base (ECB), radiation resistance, KNS/KNI structures, ultrafine silicon layer on a sapphire substrate (UTSi), microelectronics, LIC
References

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