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METHODS FOR ENSURING RESISTANCE TO HCP FOR CONTROL LOGIC AND STATIC MEMORY OF THE MICROPROCESSOR IN THE DESIGN
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METHODS FOR ENSURING RESISTANCE TO HCP FOR CONTROL LOGIC AND STATIC MEMORY OF THE MICROPROCESSOR IN THE DESIGN
UDK 62 Инженерное дело. Техника в целом. Транспорт
Grechanyy Sergey Vladimirovich 1
Chubur K. 2
Authors:
1.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

2.  FSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
Type:
Article
DOI:
https://doi.org/10.12737/2219-0767-2020-12-4-17-24
Pages:
from 17 to 24
Status:
Published
Received:
23.01.2020
Accepted:
23.01.2020
Published:
23.01.2020
Subject area:
UDK 62 Инженерное дело. Техника в целом. Транспорт
Language:
Russian
Keywords:
heavy charged particles, stability, fault tolerance, linear energy loss, microprocessor, static memory
Abstract and keywords
Abstract (English):
The article describes methods for ensuring resistance to heavy charged particles (HCP) of the RAM block of the microprocessor. A description of the implementation and a block diagram of static memory based on dummy blocks is given. The paper considers methods of combating the biopolar effect, which are aimed at controlling the potential of the transistor body and reducing the resistance. The dependence of the critical charge of a SOI-memory cell the gain of a parasitic biopolar transistor is modeled. To increase the fault tolerance of combinational circuits consisting of control logic and decoder blocks, redundancy is applied at the level of individual valves.

Keywords:
heavy charged particles, stability, fault tolerance, linear energy loss, microprocessor, static memory
References

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