Russian Federation
Russian Federation
Russian Federation
UDK 621.3 Электротехника
The paper discusses the issues of ensuring the stability of non-volatile memory under radiation exposure. Experimental studies of the durability of memristors were carried out. The switching mechanism on TaOh memristors is similar, but not identical to the TiO2 memristor. X-ray data showed that the "off" state is most susceptible to radiation damage, therefore, before gamma irradiation, all devices were reset to the "off" state. After the irradiation sequence was completed, an installation/reset cycle was performed. For example, graphs of reading I-V curves showing a slight change in slope are constructed. The setting/reset changes are in the range of observed electrical oscillations in the device between cycles, so it cannot be unambiguously attributed to gamma irradiation. When irradiated in static mode with a LPE of 70 MeV * cm2 /mg, single effects were not observed, but in dynamic mode they were.
Electronic component database, non-volatile OxRAM memory, radiation exposure, outer space, ionizing radiation.
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