from 01.01.2019 to 01.01.2021
Voronezh, Russian Federation
Voronezh, Russian Federation
Russian Federation
AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki"
Russian Federation
The article deals with the creation of a behavioral model of lateral metal oxide transistors (LDMOS) based on a neural network of the multilayer percep-tron type. The model is identified using a backpropa-gation algorithm. Demonstrated the process of creating an ANN model using Pytorch, a machine learning framework for the Python language, with subsequent transfer to the standard analog circuit modeling lan-guage Verilog-A.
LDMOS, ANN, Verilog-A, Pytorch, behavioral model
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