00878naa#a2200193#i#4500001001500000005001700015011001400032100004100046102000700087200013700094210013700231215001000368608002700378675018100405700003100586700001900617700003300636856001500669EN\\bibl\5329920241114133052.4##a2219-0767##a20221005b2022####ek#y0engy0150####ca##aRU1#aEvaluation of the effect of crystal structural features on the resistance of DMOS transistors to ionizing radiationeJournal article1#aVoronezhcFSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozovd2022##a8 с.##aJournal article2local##aЭлектронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382#1aKharchenkogM. Eduardovich#1aDorohovgV. A.#1aKolesnikovgMaksim Ivanovich4#anaukaru.ru