LDR 00878naa#a2200193#i#450#
001     EN\\bibl\53299
005     20241114133017.4
011 ## _a2219-0767
100 ## _a20221005b2022####ek#y0engy0150####ca
102 ## _aRU
200 1# _aEvaluation of the effect of crystal structural features on the resistance of DMOS transistors to ionizing radiation
       _eJournal article
210 1# _aVoronezh
       _cFSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozov
       _d2022
215 ## _a8 с.
608 ## _aJournal article
       _2local
675 ## _aЭлектронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382
       _z
700 #1 _aKharchenko
       _gM. Eduardovich
700 #1 _aDorohov
       _gV. A.
700 #1 _aKolesnikov
       _gMaksim Ivanovich
856 4# _anaukaru.ru
       _u