%0 Journal Article
%T THE INFLUENCE OF CONDITIONS OF FORMATION OF HETEROSTRUCTURES BASED ON NITRIDES OF III GROUP, ON THE STRUCTURAL PERFECTION OF THE INSTRUMENT STRUCTURES FOR MICROWAVE TRANSISTORS, AND OPTOELECTRONIC DEVICES IN THE ULTRAVIOLET RANGE.
%A Mamaev, V.V.
%A Novikov, S.A.
%A Petrov, S.I.
%A Zaycev, S.V.
%A Prohorenkov, D.S.
%K nitride heterostructures AlN/AlGaN UV photo cathodes, microwave transistors, the density of dislocations
%J Bulletin of Belgorod State Technological University named after. V. G. Shukhov
%D 2017
%N 2
%P 7
%I Belgorod State Technological University named after V.G. Shukhov