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Calculation of indicators of resistance of work of digital chips in CAD
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CALCULATION OF INDICATORS OF RESISTANCE OF WORK OF DIGITAL CHIPS IN CAD
Achkasov V.
Chevychelov Yu. Akimovich 2
Antsiferova V. 3
Lavlinskiy V. 4
Zolnikov Vladimir
Serbulov Yuriy Stefanovich 6
Tabakov Yu. 7
Authors:
2.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
3.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
4.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
6.  Voronezh State University of Forestry and Technologies named after G.F. Morozov (kafedra vychislitel'noy tehniki i informacionnyh sistem, professor)

Voronezh, Voronezh, Russian Federation
7.  Voronezh State University of Forestry and Technologies named after G.F. Morozov

Russian Federation
Type:
Article
DOI:
https://doi.org/10.12737/8494
Pages:
from 291 to 300
Status:
Published
Received:
10.03.2015
Accepted:
10.03.2015
Published:
10.03.2015
Language:
Russian
Keywords:
CAD, chips, information technology, mathematical models, chips, electronic component base, radiation resistance, radiation-resistant circuits, radiation exposure, microelectronics, radiation.
Abstract and keywords
Abstract (English):
The technique of radiation-resistant design of integrated circuits in computer-aided design is presented and comparisons with expert data are provided, which are affected by these types of radiations like gam-ma, x-ray and neutron radiation, as well as the impact of the neutron pulse, which affect largely, on the gain of the transistor are examined. Different types of cardinality doses are represented that affect the crystals of integrated circuits based on the real pulse shape of artificial intelligence.

Keywords:
CAD, chips, information technology, mathematical models, chips, electronic component base, radiation resistance, radiation-resistant circuits, radiation exposure, microelectronics, radiation.
References

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