Russian Federation
Voronezh, Russian Federation
Russian Federation
Russian Federation
The article deals with the technological process of manufacturing CMOS integrated circuits on KNS (silicon on sapphire) structures for space purposes. The technology is based on an n-type CMOS process with one level of polysilicon and two levels of metal. The components of the technological process are analyzed. The sequence of the technological process and its features are given. An example of a description of one of the elements is considered.
VLSI, space-based microchips, CMOS technology, silicon on sapphire (SSC), technological route, design
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