Science intensive technologies in mechanical engineering Science intensive technologies in mechanical engineering Наукоёмкие технологии в машиностроении 2223-4608 18672 10.12737/article_59f074a5b16728.41367086 ТЕХНОЛОГИИ НАУКОЁМКИХ МАТЕРИАЛОВ И НАНОТЕХНОЛОГИИ (архивировано) SCIENCE INTENSIVE MATERIALS PROCESSING AND NANOTECHNOLOGIES (archived) ТЕХНОЛОГИИ НАУКОЁМКИХ МАТЕРИАЛОВ И НАНОТЕХНОЛОГИИ (архивировано) Temperature stepped raising during formation of solid epitaxial films of superconductors YBa2Cu3O7-x to increase current carrying capacity of VTSP second generation bands Ступенчатый подъем температуры в процессе формирования сплошных эпитаксиальных пленок сверхпроводников YBa2Cu3O7-x для повышения токонесущей способности ВТСП лент второго поколения Куликов Иван Валерьевич Kulikov Ivan Valeryevich kulikovivan1990@gmail.com Крылова Татьяна Сергеевна Krylova Tatyana Sergeevna Черных Мария Яхяевна Chernykh Maria Yahaevna Черных Игорь Анатольевич Chernykh Igor Anatolyevich

кандидат физико-математических наук;

candidate of physical and mathematical sciences;

 Занавескин Максим Леонидович Zanaveskin Maksim Leonidovich

кандидат физико-математических наук;

candidate of physical and mathematical sciences;

 Национальный Исследовательский Центр «Курчатовский институт» Москва Россия “Kurchatov Institute” National Research Center Moscow Russian Federation Национальный Исследовательский Центр «Курчатовский институт» Москва Россия “Kurchatov Institute” National Research Center Moscow Russian Federation Национальный Исследовательский Центр «Курчатовский институт» Москва Россия “Kurchatov Institute” National Research Center Moscow Russian Federation Национальный Исследовательский Центр «Курчатовский институт» Москва Россия “Kurchatov Institute” National Research Center Moscow Russian Federation Национальный Исследовательский Центр «Курчатовский институт» Москва Россия “Kurchatov Institute” National Research Center Moscow Russian Federation 2017 11 3 9 https://naukaru.ru/en/nauka/article/18672/view

Предложен способ сохранения высокой плотности критического тока в ВТСП лентах второго поколения, основанный на ступенчатом подъеме температуры в процессе формирования сплошных эпитаксиальных ВТСП пленок. Данный метод позволяет затормозить рост a-ориентированных кристаллитов при формировании сверхпроводящего слоя толщиной до 2 мкм.

A method for the high density conservation of critical current in VTSP second generation films is offered which is based on the temperature stepped raising during the formation of solid epitaxial VTSP films. This method allows inhibiting a growth of a-directed crystals at the formation of a superconducting layer up to 2 mkm thick.

 высокотемпературная сверхпроводимость эпитаксиальные пленки импульсное лазерное осаждение ВТСП ленты второго поколения high temperature superconductivity epitaxial films pulse laser deposition VTSP second generation film.

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